PART |
Description |
Maker |
STI24N60M2 STW24N60M2 STB24N60M2 STP24N60M2 |
N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus?low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
|
STMicroelectronics
|
STW43NM60N |
N-channel 600 V, 0.075 Ω, 35 A MDmesh?/a> II Power MOSFET TO-247
|
STMicroelectronics
|
STB10N60M2 STU10N60M2 STP10N60M2 STD10N60M2 |
N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D2PAK
|
STMicroelectronics
|
STFI13NM60N |
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
STB7ANM60N |
N-channel 600 V, 5 A, 0.84 Ohm typ., MDmesh(TM) II Power MOSFET in DPAK package
|
ST Microelectronics
|
S4402 |
MOSFET, Switching; VDSS (V): 600; ID (A): 16; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.475; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
STB6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package
|
ST Microelectronics
|
STFI10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
STI33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in I2PAK package
|
ST Microelectronics
|
STL24N60M2 |
N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package
|
STMicroelectronics
|
IRG4PC50U IRG4PC50U-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD 55 A, 600 V, N-CHANNEL IGBT, TO-247AC 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.65V的,@和VGE \u003d 15V的,集成电路\u003d 27A条)
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IRF[International Rectifier] International Rectifier, Corp.
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